Lavoisier S.A.S.
14 rue de Provigny
94236 Cachan cedex
FRANCE

Heures d'ouverture 08h30-12h30/13h30-17h30
Tél.: +33 (0)1 47 40 67 00
Fax: +33 (0)1 47 40 67 02


Url canonique : www.lavoisier.fr/livre/physique/quaternary-alloys-based-on-iii-v-semiconductors/descriptif_4094108
Url courte ou permalien : www.lavoisier.fr/livre/notice.asp?ouvrage=4094108

Quaternary Alloys Based on III-V Semiconductors

Langue : Anglais

Auteur :

Couverture de l’ouvrage Quaternary Alloys Based on III-V Semiconductors

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light emitting diodes and solar cells. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about phase relations in quaternary systems based on III-V semiconductors, providing he first systematic account of phase equilibria in quaternary systems based on III-V semiconductors and making research originally published in Russian accessible to the wider scientific community.

Features:



  • Contains up-to-date experimental and theoretical information


  • Allows readers to synthesize semiconducting materials with predetermined properties


  • Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases

Systems Based on BN. Systems Based on BP. Systems Based on BAs. Systems Based on BSb. Systems Based on AlN. Systems Based on AlP. Systems Based on AlAs. Systems Based on AlSb. Systems Based on GaN. Systems Based on GaP. Systems Based on GaAs. Systems Based on GaSb. Systems Based on InN. Systems Based on InP. Systems Based on InAs. Systems Based on InSb.

Vasyl Tomashyk is Executive Director and Head of the Department of the V.Ye. Lashkaryov Institute for Semiconductor Physics of the National Academy of Sciences of Ukraine. Prof. Tomashyk graduated from Chernivtsi State University in 1972 (Master of Chemistry). He is a doctor of chemical sciences (1992), professor (1999) and author of about 570 publications in scientific journals and conference proceedings including 8 books (three of which have been published by CRC Press), which are devoted to the physical-chemical analysis and chemistry of semiconductors, and the chemical treatment of semiconductor surfaces. Vasyl Tomashyk is a specialist of high international repute in the field of solid state and semiconductor chemistry, including physical-chemical analysis, and technology of semiconductor materials. He was head of research topics within the international program "Copernicus". He is a member of the Materials Science International Team (Stuttgart, Germany, since 1999) which prepares a series of prestigious reference-books under the title "Ternary Alloys" and "Binary Alloys" and has published 35 articles in the Landolt–Börnstein New Series. Vasyl Tomashyk works actively with young researchers and graduate students and under his supervision 20 Ph.D. theses have been prepared. For many years, he has been a professor at Ivan Franko Zhytomyr State University.