Nanolithography and Surface Microscopy with Electron Beams Advances in Imaging and Electron Physics Series

Nanolithography and Surface Microscopy with Electron Beams, Volume 231 merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. Specific chapters cover Introduction to inverse problems in electron microscopy, Directional sinogram inpainting for limited angle tomography, Strain tomography of crystals, FISTA with adaptive discretization, Total variation discretization, and Reconstruction with a Gaussian Dictionary.

Introduction and Summary
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1. Early life
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2. Modification of an SEM/Ion beam system to improve the resolution and reliability of the SEM and remove oxygen ions from the ion beam
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3. Formation of cones and ridges on ion-etched surfaces
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4. Microfabrication in an SEM
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5. High Resolution Short Focal Length Lens Electron Probe
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6. Low-Loss Surface Microscopy in short focal length Probe
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7. Microfabrication in the 5Å electron probe
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8. Nanodevices fabricated in the HR Probe
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9. Fabrication of Structures with Dimensions Below 10 nm
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10. Semiconductor Lithography and Processing
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11. Nanolithography at 400kV
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12. Last twenty years and future of semiconductor chips
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Peter Hawkes obtained his M.A. and Ph.D (and later, Sc.D.) from the University of Cambridge, where he subsequently held Fellowships of Peterhouse and of Churchill College. From 1959 – 1975, he worked in the electron microscope section of the Cavendish Laboratory in Cambridge, after which he joined the CNRS Laboratory of Electron Optics in Toulouse, of which he was Director in 1987. He was Founder-President of the European Microscopy Society and is a Fellow of the Microscopy and Optical Societies of America. He is a member of the editorial boards of several microscopy journals and serial editor of Advances in Electron Optics.
Dr Martin Hÿtch, serial editor for the book series “Advances in Imaging and Electron Physics (AIEP)”, is a senior scientist at the French National Centre for Research (CNRS) in Toulouse. He moved to France after receiving his PhD from the University of Cambridge in 1991 on “Quantitative high-resolution transmission electron microscopy (HRTEM)”, joining the CNRS in Paris as permanent staff member in 1995. His research focuses on the development of quantitative electron microscopy techniques for materials science applications. He is notably the inventor of Geometric Phase Analysis (GPA) and Dark-Field Electron Holography (DFEH), two techniques for the measurement of strain at the nanoscale. Since moving to the CEMES-CNRS in Toulouse in 2004, he has been working on aberration-corrected HRTEM and electron holography for the study of electronic devices, nanocrystals and ferroelectrics. He was laureate of the prestigious European Microscopy Award for Physical Sciences of the European Microscopy Society in 2008. To date he has published 130 papers in international journals, filed 6 patents and has given over 70 invited talks at international conferences and workshops.