Energy Efficient and Reliable Embedded Nanoscale SRAM Design

This reference text covers a wide spectrum for designing robust embedded memory and peripheral circuitry. It will serve as a useful text for senior undergraduate and graduate students and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering.

• Discusses low-power design methodologies for static random-access memory (SRAM)
• Covers radiation-hardened SRAM design for aerospace applications
• Focuses on various reliability issues that are faced by submicron technologies
• Exhibits more stable memory topologies

Nanoscale technologies unveiled significant challenges to the design of energy- efficient and reliable SRAMs. This reference text investigates the impact of process variation, leakage, aging, soft errors and related reliability issues in embedded memory and periphery circuitry.

The text adopts a unique way to explain the SRAM bitcell, array design, and analysis of its design parameters to meet the sub-nano-regime challenges for complementary metal-oxide semiconductor devices. It comprehensively covers low- power-design methodologies for SRAM, exhibits more stable memory topologies, and radiation-hardened SRAM design for aerospace applications. Every chapter includes a glossary, highlights, a question bank, and problems. The text will serve as a useful text for senior undergraduate students, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. Discussing comprehensive studies of variability-induced failure mechanism in sense amplifiers and power, delay, and read yield trade-offs, this reference text will serve as a useful text for senior undergraduate, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. It covers the development of robust SRAMs, well suited for low-power multi-core processors for wireless sensors node, battery-operated portable devices, personal health care assistants, and smart Internet of Things applications.

Chapter 1
Introduction

Chapter 2
Design Metrics for Embedded SRAM

Chapter 3
SRAM Bitcells Over Conventional Memories

Chapter 4
Offset correction in Sense Amplifier

Chapter 5
Data Sensing in SRAM a Hybrid Approach with FinFET

Chapter 6
Bias Temperature Instability Aware and Soft Error Tolerant SRAM Cell

Bhupendra Singh Reniwal received B. Tech & M. Tech from SGSITS-Indore and Ph.D. from IIT, Indore, India in 2006, 2011 and 2016 respectively. He is currently working as Assistant Professor in the Department of Electrical Engineering, Indian Institute of Technology Jodhpur, India. Post Ph.D. he has worked as a Senior Product Development Engineer, Semiconductor Vertical in UST Global Bangalore, India Mixed-Signal IP Solution Group (MIG) at Intel Corporation Penang, Malaysia, and Systems & Technology Group, ASIC Foundry, IBM Bangalore where he was involved on developing Energy Efficient Memory Architecture, I/O Circuit Design, and its pre-silicon validation, for Internet of Things (IoT), applications in subnanometric trigate FinFET processes. In IBM he was involved in R&D on low power methodology definition at Schematic2GDS level for sub-nanometric nodes, especially for FinFET memory design. He has served the Department of Electronics & Communication Engineering IIITDM Kancheepuram and BITS Pilani, as an Assistant Professor from Nov-2019 to Oct-2022 and May-Dec 2017, respectively. He is a recipient of the prestigious SIRE-2022 Faculty Fellowship from the Department of Science & Technology (DST) GOI and joined University of Virginia, USA as a Visiting Faculty. He received the User Design Best Research Paper Award in IEEE 29th International Conference on VLSI Design and Best Poster Presentation Award for Ultra Low Power SRAM Design in Ramanujan Conclave 2016. He is a recipient of the International Travel Award as early recognition in Solid State Circuit Design from the Association of Computing Machinery (ACM), NY, USA, and DST.

Dr. Pooran Singh is an Assistant Professor in the Department of Electrical and Computer Engineering at Mahindra University École Centrale School of Engineering. Dr. Pooran graduated with a Ph.D. from the Department of Electrical Engineering, IIT Indore. He is a Fulbright-Nehru Doctoral Fellow (2014-15). Under Fulbright